| Operation improvement and 3D simulation of electric charactristics, and small signal effects of singel-wall and double-wall CNT-FET |
| Paper ID : 2048-UFGNSM13-FULL |
| Authors: |
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hadi shahnazari sani *1, Mohammad Jozi Najafabadi2 1تهران انتهای اتوبان شهید بابایی روبروی دانشگاه امام حسین شهرک شهید بهشتی یاسمن 31 واحد23 کد پستی 1651133931 2Department of Electeronic Engineering, Engineering Univercity of Semnan |
| Abstract: |
| Gate input current is increased by reduction transistor size. For better and faster cpus fabrication more transistors in small area are used, that it makes challenges because of tunneling current and Bohr dispersal. Because of importance of high current electronic devices usage, SWCNT is considered as a single dimension structure. In this study, at first the effects of different gate formations on small channel for CNTFET (Carbon Nanotube Fild Effect Transistr) are investigated with stained drain and sourse. And the computation model for CNTFETs study is proposed. CNTFETs can be made by ohmic or shottkey junction. Then doubel gate CNTFET (DG-CNTFET) is studied. Results illustrate that the increment of nanotubes diameter and density, increased ON state current. Also, OFF state current of DG-CNTFET is increased by drain voltage increment. Moreover, negative gate voltages in high drain voltage need to higher negative gate voltage in order to increment of band to band tunneling drain current is able to be seen, that Finaly show resonance in low drain voltage. We set our calculations based on shottkey transistor, and consider its work based on carrier crossing factor from shottkey barrier in metal and carbon nanotubes semiconductor boundray. In offered computation method, current variation by channel characteristics, voltage and other parameters are calculated. |
| Keywords: |
| FET, CNT, crinkle nanotube |
| Status : Paper Accepted (Poster Presentation) |
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