| Presentation of double level FINFET structure with triple metal gate work function for drain barrier reduction and improvement of sub-threshold operation in high temperature |
| Paper ID : 2050-UFGNSM13-FULL |
| Authors: |
|
hadi shahnazari sani *1, Mohammad Jozi Najafabadi2 1تهران انتهای اتوبان شهید بابایی روبروی دانشگاه امام حسین شهرک شهید بهشتی یاسمن 31 واحد23 کد پستی 1651133931 2Department of Electeronic Engineering, Engineering Univercity of Semnan |
| Abstract: |
| Control of gate on transistor channel is decreased by nano technology improvement and dimension of semiconductor devises decrement. For reduce these effects new technologies are offered. Study of these structures shows best efficiency and very low dimensions. In this paper the new structure of FINFET that calling (BL-FINFET) is offered. In BL-FINFET, transistor fin region making from two levels with different heights and diameters. Result of simulation using ATLAS shows that this structure has an appropriate behavior in high temperature in comparison to common structure (C-FINFET). Also triple metal gate work function on FINFET operation with surrounding channel is studied. This structure is simulated with ATLAS, Its result for several metal shows that metal is able to decrease little channel effects by selecting proper work function. Also drain charges in channel is decreased due to gate control increment on channel, and as a result reduced DIBL and shows sub¬¬ threshold near to ideal operation. DIBL is equal to 1.4 mv/v and slope is lower than 65 mv/dec, that them confirm this operation. |
| Keywords: |
| BL-FINFET, DIBL, Work function, sub threshold slope, triple metal gate |
| Status : Paper Accepted (Poster Presentation) |
© 2010 - 2024 All Rights Reserved. Powered by sinaweb.