Titanium dioxide thin film fabricated by Atomic Layer Deposition (ALD) |
Paper ID : 2071-UFGNSM13-FULL (R1) |
Authors: |
Hamed Mehrabi *1, Sohrab Sanjabi2 1Tarbiat Modares University, Nasr bridge, Jalal-Ale-Ahamd highway, Theran Iran 2Department of Materials Science and Engineering, Tarbiat Modares University, Tehran, P.O.Box: 14115-143, Iran |
Abstract: |
Titanium oxide (TiO2) is a widely used self-cleaning material. This material was deposited to lame glass and silicon surfaces via Atomic Layer Deposition (ALD). ALD is a chemical vapor deposition method in which the precursors are applied in sequential cycles. In this study, TiCl4 and H2O were used as precursors and Ar as purging gas. The layers were deposited in the range of 150°C to 300°C and with 10 to 50 cycles. The layers were characterized by UV/Visible spectroscopy, AFM, FTIR, and SEM. |
Keywords: |
ALD, Photo-catalyst, Self cleaning, Thin film |
Status : Paper Accepted (Poster Presentation) |